Interference exposure Interference exposure

Interference exposure

Precilasers' high-performance industrial lasers have the characteristics of narrow linewidth, high power, and long life, and can be used for advanced industrial applications such as semiconductor wafer inspection, wafer measurement, and interferometric exposure. We can also provide customized product development solutions to help your scientific research, development, and production.

Interference exposure laser

Real photos
Wavelength
Power
Introduction
Features
 
30mW
0.1W
0.5W
1W
Based on the quadruple frequency solution, it outputs high-power continuous deep ultraviolet laser, which is suitable for semiconductor precision detection, measurement and other applications
  • High power
  • Narrow linewidth
  • Long life
  • 0.3W
    1W
    2W
    Based on the resonant frequency doubling solution, it outputs ultraviolet laser, which is suitable for applications such as interference exposure.
    • High power
    • Looks relevant
    • Long life
    0.02W
    0.03W
     
    Based on a single-pass triple frequency scheme, it outputs ultraviolet laser light, suitable for applications such as interference exposure
    • High power
    • Looks relevant
    • Long life

    0.5W
    2W
    4W
    Based on the resonant frequency doubling solution, it outputs high-power ultraviolet laser, which is suitable for applications such as interference exposure.
    • High power
    • Looks relevant
    • Long life

    0.05W
    1W
    3W
    6W
    8W
    Based on the resonant frequency doubling solution, it outputs ultraviolet laser, which is suitable for applications such as interference exposure.
    • High power
    • Looks relevant
    • Long life

    0.1W
    1W
    Based on the resonant frequency doubling solution, it outputs ultraviolet laser, which is suitable for applications such as interference exposure.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop
    0.05W
    1W
    3W
    6W
    Based on the quadruple frequency scheme, it outputs high-power deep ultraviolet laser, which is suitable for semiconductor precision detection, interference exposure and other applications
    • High power
    • Looks relevant
    • Long life

    1W
    6W
    10W
    30W
    Based on the frequency doubling solution, it outputs green laser, which is suitable for applications such as interference exposure.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop

    0.2W
    1.5W
    10W
    20W
    30W
    80W
    Based on the resonant frequency doubling solution, it outputs green laser light, which is suitable for applications such as interference exposure.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop

    0.5W
    1W
    3W
    Based on high-power, low-noise ytterbium-doped fiber amplification and frequency doubling technology, high-power narrow-linewidth laser output with any central wavelength within the 561nm range is achieved.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop

    0.5W
    2W
    5W
    Based on high-power, low-noise Raman fiber amplification and frequency doubling technology, high-power narrow-linewidth laser output at a wavelength of 578nm is achieved.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop

    2W
    5W
    Based on high-power, low-noise Raman fiber amplification and frequency doubling technology, high-power narrow-linewidth laser output at a wavelength of 589nm is achieved.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop

    0.5W
    2W
    5W
    10W
    Based on the solution of sum frequency, it outputs red laser, which is suitable for applications such as interferometry and interferometry exposure.
    • Narrow linewidth
    • High power
    • Excellent beam quality
    • Never mode hop